| Manufacturer | |
| Mfr. Part # | GL80N10A4 |
| EBEE Part # | E82886416 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 80A 7.2mΩ@10V,40A 125W 1V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5175 | $ 0.5175 |
| 10+ | $0.4210 | $ 4.2100 |
| 30+ | $0.3712 | $ 11.1360 |
| 100+ | $0.3229 | $ 32.2900 |
| 500+ | $0.2792 | $ 139.6000 |
| 1000+ | $0.2641 | $ 264.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | GL GL80N10A4 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 8.5mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 4.2nF | |
| Output Capacitance(Coss) | 354pF | |
| Gate Charge(Qg) | 65nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5175 | $ 0.5175 |
| 10+ | $0.4210 | $ 4.2100 |
| 30+ | $0.3712 | $ 11.1360 |
| 100+ | $0.3229 | $ 32.2900 |
| 500+ | $0.2792 | $ 139.6000 |
| 1000+ | $0.2641 | $ 264.1000 |
