| Manufacturer | |
| Mfr. Part # | GL4N65FA9 |
| EBEE Part # | E82999756 |
| Package | TO-220F-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| Description | 650V 4A 30W 1.9Ω@10V,2A 2V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3366 | $ 0.3366 |
| 10+ | $0.2666 | $ 2.6660 |
| 50+ | $0.2366 | $ 11.8300 |
| 100+ | $0.1992 | $ 19.9200 |
| 500+ | $0.1826 | $ 91.3000 |
| 1000+ | $0.1726 | $ 172.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | GL GL4N65FA9 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 2.4Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 30W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 544pF | |
| Output Capacitance(Coss) | 55pF | |
| Gate Charge(Qg) | 14.5nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3366 | $ 0.3366 |
| 10+ | $0.2666 | $ 2.6660 |
| 50+ | $0.2366 | $ 11.8300 |
| 100+ | $0.1992 | $ 19.9200 |
| 500+ | $0.1826 | $ 91.3000 |
| 1000+ | $0.1726 | $ 172.6000 |
