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GL GL4N65FA9


Manufacturer
Mfr. Part #
GL4N65FA9
EBEE Part #
E82999756
Package
TO-220F-3
Customer #
Datasheet
EDA Models
Description
650V 4A 30W 1.9Ω@10V,2A 2V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS
This materials supports customized cables!
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660 In Stock for Fast Shipping
660 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.3366$ 0.3366
10+$0.2666$ 2.6660
50+$0.2366$ 11.8300
100+$0.1992$ 19.9200
500+$0.1826$ 91.3000
1000+$0.1726$ 172.6000
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TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetGL GL4N65FA9
RoHS
TypeN-Channel
RDS(on)2.4Ω@10V
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)8.5pF
Number1 N-channel
Pd - Power Dissipation30W
Drain to Source Voltage650V
Gate Threshold Voltage (Vgs(th))4V
Current - Continuous Drain(Id)4A
Ciss-Input Capacitance544pF
Output Capacitance(Coss)55pF
Gate Charge(Qg)14.5nC@10V

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