| Manufacturer | |
| Mfr. Part # | EV-IRFR5410-T1 |
| EBEE Part # | E841433128 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 13A 31.3W 115mΩ@4.5V,5A 2.5V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2835 | $ 1.4175 |
| 50+ | $0.2301 | $ 11.5050 |
| 150+ | $0.2072 | $ 31.0800 |
| 500+ | $0.1786 | $ 89.3000 |
| 2500+ | $0.1658 | $ 414.5000 |
| 5000+ | $0.1582 | $ 791.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | EVVO EV-IRFR5410-T1 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 Piece P-Channel | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 13A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 115mΩ@4.5V,5A | |
| Power Dissipation (Pd) | 31.3W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF@15V | |
| Input Capacitance (Ciss@Vds) | 1.08nF@15V | |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2835 | $ 1.4175 |
| 50+ | $0.2301 | $ 11.5050 |
| 150+ | $0.2072 | $ 31.0800 |
| 500+ | $0.1786 | $ 89.3000 |
| 2500+ | $0.1658 | $ 414.5000 |
| 5000+ | $0.1582 | $ 791.0000 |
