| Manufacturer | |
| Mfr. Part # | EV-IRFR5305-T1 |
| EBEE Part # | E841433129 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 30A 55mΩ@4.5V 60W 1.1V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3151 | $ 1.5755 |
| 50+ | $0.2556 | $ 12.7800 |
| 150+ | $0.2302 | $ 34.5300 |
| 500+ | $0.1985 | $ 99.2500 |
| 2500+ | $0.1843 | $ 460.7500 |
| 5000+ | $0.1758 | $ 879.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | EVVO EV-IRFR5305-T1 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Type | 1 Piece P-Channel | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 30A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 55mΩ@4.5V | |
| Power Dissipation (Pd) | 60W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.1V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF@30V | |
| Input Capacitance (Ciss@Vds) | 3060pF@30V | |
| Total Gate Charge (Qg@Vgs) | 48nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3151 | $ 1.5755 |
| 50+ | $0.2556 | $ 12.7800 |
| 150+ | $0.2302 | $ 34.5300 |
| 500+ | $0.1985 | $ 99.2500 |
| 2500+ | $0.1843 | $ 460.7500 |
| 5000+ | $0.1758 | $ 879.0000 |
