| Manufacturer | |
| Mfr. Part # | EV-IRFR3410-T1 |
| EBEE Part # | E841433130 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 30A 42W 48mΩ@10V,10A 2.2V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2835 | $ 1.4175 |
| 50+ | $0.2301 | $ 11.5050 |
| 150+ | $0.2072 | $ 31.0800 |
| 500+ | $0.1786 | $ 89.3000 |
| 2500+ | $0.1658 | $ 414.5000 |
| 5000+ | $0.1582 | $ 791.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | EVVO EV-IRFR3410-T1 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 30A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 48mΩ@10V,10A | |
| Power Dissipation (Pd) | 42W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.2V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| Input Capacitance (Ciss@Vds) | 1964pF@25V | |
| Total Gate Charge (Qg@Vgs) | 20nC@80V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2835 | $ 1.4175 |
| 50+ | $0.2301 | $ 11.5050 |
| 150+ | $0.2072 | $ 31.0800 |
| 500+ | $0.1786 | $ 89.3000 |
| 2500+ | $0.1658 | $ 414.5000 |
| 5000+ | $0.1582 | $ 791.0000 |
