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EVVO EV-IRFR120N-T1
| Manufacturer | |
| Mfr. Part # | EV-IRFR120N-T1 |
| EBEE Part # | E841433131 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 9.4A 210mΩ@10V,5.6A 1.5W 4V@250uA 1 N-channel TO-252 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1764 | $ 0.8820 |
| 50+ | $0.1432 | $ 7.1600 |
| 150+ | $0.1289 | $ 19.3350 |
| 500+ | $0.1112 | $ 55.6000 |
| 2500+ | $0.1033 | $ 258.2500 |
| 5000+ | $0.0984 | $ 492.0000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | EVVO EV-IRFR120N-T1 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 9.4A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 210mΩ@10V,5.6A | |
| Power Dissipation (Pd) | 1.5W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF | |
| Input Capacitance (Ciss@Vds) | 330pF | |
| Total Gate Charge (Qg@Vgs) | 25nC |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1764 | $ 0.8820 |
| 50+ | $0.1432 | $ 7.1600 |
| 150+ | $0.1289 | $ 19.3350 |
| 500+ | $0.1112 | $ 55.6000 |
| 2500+ | $0.1033 | $ 258.2500 |
| 5000+ | $0.0984 | $ 492.0000 |
