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EVVO EV-IRFB4110-T3


Manufacturer
Mfr. Part #
EV-IRFB4110-T3
EBEE Part #
E841433137
Package
TO-220
Customer #
Datasheet
EDA Models
ECCN
-
Description
100V 120A 370W 3.7mΩ@10V,75A 4V@250uA 1 N-channel TO-220 MOSFETs ROHS
This materials supports customized cables!
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930 In Stock for Fast Shipping
930 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.7185$ 0.7185
10+$0.5955$ 5.9550
50+$0.5339$ 26.6950
100+$0.4743$ 47.4300
500+$0.4380$ 219.0000
1000+$0.4181$ 418.1000
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TypeDescription
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CategoryTransistors/Thyristors ,MOSFETs
DatasheetEVVO EV-IRFB4110-T3
RoHS
Operating Temperature-55℃~+175℃
Type1 N-channel
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.7mΩ@10V,75A
Power Dissipation (Pd)370W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)250pF
Input Capacitance (Ciss@Vds)9620pF
Total Gate Charge (Qg@Vgs)210nC

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