| Manufacturer | |
| Mfr. Part # | DOU30N06 |
| EBEE Part # | E836499174 |
| Package | TO-251 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 30A 30mΩ@10V,15A 55W 1.6V@250uA 1 N-channel TO-251 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1998 | $ 0.9990 |
| 50+ | $0.1582 | $ 7.9100 |
| 150+ | $0.1404 | $ 21.0600 |
| 525+ | $0.1181 | $ 62.0025 |
| 2475+ | $0.1082 | $ 267.7950 |
| 5025+ | $0.1023 | $ 514.0575 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOU30N06 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 30mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 55W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.45nF | |
| Gate Charge(Qg) | 25nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1998 | $ 0.9990 |
| 50+ | $0.1582 | $ 7.9100 |
| 150+ | $0.1404 | $ 21.0600 |
| 525+ | $0.1181 | $ 62.0025 |
| 2475+ | $0.1082 | $ 267.7950 |
| 5025+ | $0.1023 | $ 514.0575 |
