| Manufacturer | |
| Mfr. Part # | DOP50N10 |
| EBEE Part # | E842412139 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4762 | $ 0.4762 |
| 10+ | $0.4215 | $ 4.2150 |
| 50+ | $0.3950 | $ 19.7500 |
| 100+ | $0.3685 | $ 36.8500 |
| 500+ | $0.3528 | $ 176.4000 |
| 1000+ | $0.3450 | $ 345.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOP50N10 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 18mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 160W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 2.9nF | |
| Output Capacitance(Coss) | 290pF | |
| Gate Charge(Qg) | 40nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4762 | $ 0.4762 |
| 10+ | $0.4215 | $ 4.2150 |
| 50+ | $0.3950 | $ 19.7500 |
| 100+ | $0.3685 | $ 36.8500 |
| 500+ | $0.3528 | $ 176.4000 |
| 1000+ | $0.3450 | $ 345.0000 |
