| Manufacturer | |
| Mfr. Part # | DOP50N06 |
| EBEE Part # | E841384536 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 50A 85W 15mΩ@10V,20A 1.4V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2123 | $ 1.0615 |
| 50+ | $0.1627 | $ 8.1350 |
| 150+ | $0.1436 | $ 21.5400 |
| 500+ | $0.1198 | $ 59.9000 |
| 2500+ | $0.1093 | $ 273.2500 |
| 5000+ | $0.1029 | $ 514.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOP50N06 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 15mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 85W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 2nF | |
| Gate Charge(Qg) | 48nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2123 | $ 1.0615 |
| 50+ | $0.1627 | $ 8.1350 |
| 150+ | $0.1436 | $ 21.5400 |
| 500+ | $0.1198 | $ 59.9000 |
| 2500+ | $0.1093 | $ 273.2500 |
| 5000+ | $0.1029 | $ 514.5000 |
