| Manufacturer | |
| Mfr. Part # | DOP20N06 |
| EBEE Part # | E841384533 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 20A 35mΩ@10V,20A 52.1W 2.5V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1986 | $ 0.9930 |
| 50+ | $0.1608 | $ 8.0400 |
| 150+ | $0.1445 | $ 21.6750 |
| 500+ | $0.1243 | $ 62.1500 |
| 2500+ | $0.1153 | $ 288.2500 |
| 5000+ | $0.1099 | $ 549.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOP20N06 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 35mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 52.1W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.027nF | |
| Output Capacitance(Coss) | 65pF | |
| Gate Charge(Qg) | 19nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1986 | $ 0.9930 |
| 50+ | $0.1608 | $ 8.0400 |
| 150+ | $0.1445 | $ 21.6750 |
| 500+ | $0.1243 | $ 62.1500 |
| 2500+ | $0.1153 | $ 288.2500 |
| 5000+ | $0.1099 | $ 549.5000 |
