| Manufacturer | |
| Mfr. Part # | DOP12P10 |
| EBEE Part # | E841384273 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 12A 200mΩ@10V,12A 40W 1V@250uA 1 Piece P-Channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2302 | $ 1.1510 |
| 50+ | $0.1807 | $ 9.0350 |
| 150+ | $0.1596 | $ 23.9400 |
| 500+ | $0.1331 | $ 66.5500 |
| 2500+ | $0.1214 | $ 303.5000 |
| 5000+ | $0.1143 | $ 571.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOP12P10 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 200mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 40W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 760pF | |
| Gate Charge(Qg) | 25nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2302 | $ 1.1510 |
| 50+ | $0.1807 | $ 9.0350 |
| 150+ | $0.1596 | $ 23.9400 |
| 500+ | $0.1331 | $ 66.5500 |
| 2500+ | $0.1214 | $ 303.5000 |
| 5000+ | $0.1143 | $ 571.5000 |
