| Manufacturer | |
| Mfr. Part # | DOD80N03 |
| EBEE Part # | E841416031 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 30V 80A 5mΩ@10V,30A 46W 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0791 | $ 0.3955 |
| 50+ | $0.0630 | $ 3.1500 |
| 150+ | $0.0550 | $ 8.2500 |
| 500+ | $0.0489 | $ 24.4500 |
| 2500+ | $0.0441 | $ 110.2500 |
| 5000+ | $0.0417 | $ 208.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD80N03 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 5mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 46W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 1.614nF | |
| Gate Charge(Qg) | 33.7nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0791 | $ 0.3955 |
| 50+ | $0.0630 | $ 3.1500 |
| 150+ | $0.0550 | $ 8.2500 |
| 500+ | $0.0489 | $ 24.4500 |
| 2500+ | $0.0441 | $ 110.2500 |
| 5000+ | $0.0417 | $ 208.5000 |
