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DOINGTER DOD639B


Manufacturer
Mfr. Part #
DOD639B
EBEE Part #
E842412129
Package
TO-252-4
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-252-4 MOSFETs ROHS
This materials supports customized cables!
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2435 In Stock for Fast Shipping
2435 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
5+$0.2581$ 1.2905
50+$0.2026$ 10.1300
150+$0.1789$ 26.8350
500+$0.1493$ 74.6500
2500+$0.1361$ 340.2500
5000+$0.1282$ 641.0000
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TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetDOINGTER DOD639B
RoHS
TypeN-Channel + P-Channel
Configuration-
RDS(on)4.2mΩ@10V;10.2mΩ@10V
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)148pF;225pF
Number1 N-Channel + 1 P-Channel
Pd - Power Dissipation55W
Drain to Source Voltage40V;40V
Gate Threshold Voltage (Vgs(th))1.6V;2.5V
Current - Continuous Drain(Id)60A;38A
Ciss-Input Capacitance2.38nF;3.119nF
Output Capacitance(Coss)230pF;237pF
Gate Charge(Qg)[email protected];41nC@10V

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