| Manufacturer | |
| Mfr. Part # | DOD639B |
| EBEE Part # | E842412129 |
| Package | TO-252-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252-4 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2581 | $ 1.2905 |
| 50+ | $0.2026 | $ 10.1300 |
| 150+ | $0.1789 | $ 26.8350 |
| 500+ | $0.1493 | $ 74.6500 |
| 2500+ | $0.1361 | $ 340.2500 |
| 5000+ | $0.1282 | $ 641.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD639B | |
| RoHS | ||
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| RDS(on) | 4.2mΩ@10V;10.2mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 148pF;225pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | 55W | |
| Drain to Source Voltage | 40V;40V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V;2.5V | |
| Current - Continuous Drain(Id) | 60A;38A | |
| Ciss-Input Capacitance | 2.38nF;3.119nF | |
| Output Capacitance(Coss) | 230pF;237pF | |
| Gate Charge(Qg) | [email protected];41nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2581 | $ 1.2905 |
| 50+ | $0.2026 | $ 10.1300 |
| 150+ | $0.1789 | $ 26.8350 |
| 500+ | $0.1493 | $ 74.6500 |
| 2500+ | $0.1361 | $ 340.2500 |
| 5000+ | $0.1282 | $ 641.0000 |
