| Manufacturer | |
| Mfr. Part # | DOD619B |
| EBEE Part # | E842412128 |
| Package | TO-252-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252-4 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1300 | $ 0.6500 |
| 50+ | $0.1028 | $ 5.1400 |
| 150+ | $0.0892 | $ 13.3800 |
| 500+ | $0.0790 | $ 39.5000 |
| 2500+ | $0.0708 | $ 177.0000 |
| 5000+ | $0.0667 | $ 333.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD619B | |
| RoHS | ||
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| RDS(on) | 14mΩ@10V;20mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 67.5pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | 40W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V;2V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 979pF | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | 10nC@8V;[email protected] |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1300 | $ 0.6500 |
| 50+ | $0.1028 | $ 5.1400 |
| 150+ | $0.0892 | $ 13.3800 |
| 500+ | $0.0790 | $ 39.5000 |
| 2500+ | $0.0708 | $ 177.0000 |
| 5000+ | $0.0667 | $ 333.5000 |
