| Manufacturer | |
| Mfr. Part # | DOD60P03 |
| EBEE Part # | E842395894 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1582 | $ 0.7910 |
| 50+ | $0.1243 | $ 6.2150 |
| 150+ | $0.1097 | $ 16.4550 |
| 500+ | $0.0915 | $ 45.7500 |
| 2500+ | $0.0835 | $ 208.7500 |
| 5000+ | $0.0786 | $ 393.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD60P03 | |
| RoHS | ||
| Configuration | - | |
| RDS(on) | 7.5mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 342pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 3.15nF | |
| Gate Charge(Qg) | 84nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1582 | $ 0.7910 |
| 50+ | $0.1243 | $ 6.2150 |
| 150+ | $0.1097 | $ 16.4550 |
| 500+ | $0.0915 | $ 45.7500 |
| 2500+ | $0.0835 | $ 208.7500 |
| 5000+ | $0.0786 | $ 393.0000 |
