| Manufacturer | |
| Mfr. Part # | DOD60N04 |
| EBEE Part # | E841430589 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 40V 60A 47W 6.5mΩ@10V,30A 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1022 | $ 0.5110 |
| 50+ | $0.0808 | $ 4.0400 |
| 150+ | $0.0701 | $ 10.5150 |
| 500+ | $0.0621 | $ 31.0500 |
| 2500+ | $0.0556 | $ 139.0000 |
| 5000+ | $0.0524 | $ 262.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD60N04 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 6.5mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 47W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.38nF | |
| Gate Charge(Qg) | 35nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1022 | $ 0.5110 |
| 50+ | $0.0808 | $ 4.0400 |
| 150+ | $0.0701 | $ 10.5150 |
| 500+ | $0.0621 | $ 31.0500 |
| 2500+ | $0.0556 | $ 139.0000 |
| 5000+ | $0.0524 | $ 262.0000 |
