| Manufacturer | |
| Mfr. Part # | DOD607F |
| EBEE Part # | E841416019 |
| Package | TO-252-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 30V 25A 30W 13mΩ@10V,10A 2.5V@250uA 1 N-Channel + 1 P-Channel TO-252-4 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1145 | $ 0.5725 |
| 50+ | $0.0912 | $ 4.5600 |
| 150+ | $0.0795 | $ 11.9250 |
| 500+ | $0.0708 | $ 35.4000 |
| 2500+ | $0.0638 | $ 159.5000 |
| 5000+ | $0.0603 | $ 301.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD607F | |
| RoHS | ||
| Type | N-Channel + P-Channel | |
| RDS(on) | 13mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | 30W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 660pF | |
| Output Capacitance(Coss) | 105pF | |
| Gate Charge(Qg) | 15nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1145 | $ 0.5725 |
| 50+ | $0.0912 | $ 4.5600 |
| 150+ | $0.0795 | $ 11.9250 |
| 500+ | $0.0708 | $ 35.4000 |
| 2500+ | $0.0638 | $ 159.5000 |
| 5000+ | $0.0603 | $ 301.5000 |
