| Manufacturer | |
| Mfr. Part # | DOD603 |
| EBEE Part # | E842412130 |
| Package | TO-252-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252-4 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1554 | $ 0.7770 |
| 50+ | $0.1220 | $ 6.1000 |
| 150+ | $0.1077 | $ 16.1550 |
| 500+ | $0.0899 | $ 44.9500 |
| 2500+ | $0.0819 | $ 204.7500 |
| 5000+ | $0.0772 | $ 386.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD603 | |
| RoHS | ||
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| RDS(on) | 26mΩ@10V;80mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF;75pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | 23W;23W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V;1.5V | |
| Current - Continuous Drain(Id) | 16A;18A | |
| Ciss-Input Capacitance | 1.1nF;1.6nF | |
| Output Capacitance(Coss) | 52pF;90pF | |
| Gate Charge(Qg) | 20.3nC@10V;37.6nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1554 | $ 0.7770 |
| 50+ | $0.1220 | $ 6.1000 |
| 150+ | $0.1077 | $ 16.1550 |
| 500+ | $0.0899 | $ 44.9500 |
| 2500+ | $0.0819 | $ 204.7500 |
| 5000+ | $0.0772 | $ 386.0000 |
