| Manufacturer | |
| Mfr. Part # | DOD50P03 |
| EBEE Part # | E841416034 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 30V 50A 10mΩ@10V,20A 75W 2.5V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1154 | $ 0.5770 |
| 50+ | $0.0919 | $ 4.5950 |
| 150+ | $0.0802 | $ 12.0300 |
| 500+ | $0.0714 | $ 35.7000 |
| 2500+ | $0.0644 | $ 161.0000 |
| 5000+ | $0.0608 | $ 304.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD50P03 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 10mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 285pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 75W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 2.35nF | |
| Gate Charge(Qg) | 40nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1154 | $ 0.5770 |
| 50+ | $0.0919 | $ 4.5950 |
| 150+ | $0.0802 | $ 12.0300 |
| 500+ | $0.0714 | $ 35.7000 |
| 2500+ | $0.0644 | $ 161.0000 |
| 5000+ | $0.0608 | $ 304.0000 |
