| Manufacturer | |
| Mfr. Part # | DOD50P02 |
| EBEE Part # | E842395892 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1089 | $ 0.5445 |
| 50+ | $0.0861 | $ 4.3050 |
| 150+ | $0.0747 | $ 11.2050 |
| 500+ | $0.0661 | $ 33.0500 |
| 2500+ | $0.0593 | $ 148.2500 |
| 5000+ | $0.0559 | $ 279.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD50P02 | |
| RoHS | ||
| Type | P-Channel | |
| Configuration | - | |
| RDS(on) | 10mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 27W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | - |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1089 | $ 0.5445 |
| 50+ | $0.0861 | $ 4.3050 |
| 150+ | $0.0747 | $ 11.2050 |
| 500+ | $0.0661 | $ 33.0500 |
| 2500+ | $0.0593 | $ 148.2500 |
| 5000+ | $0.0559 | $ 279.5000 |
