| Manufacturer | |
| Mfr. Part # | DOD50N06 |
| EBEE Part # | E836499183 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 50A 15mΩ@10V,30A 75W 1V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0986 | $ 0.4930 |
| 50+ | $0.0796 | $ 3.9800 |
| 150+ | $0.0701 | $ 10.5150 |
| 500+ | $0.0630 | $ 31.5000 |
| 2500+ | $0.0573 | $ 143.2500 |
| 5000+ | $0.0544 | $ 272.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD50N06 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 11mΩ@10V;15mΩ@4.5V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 75W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.928nF | |
| Output Capacitance(Coss) | 136pF | |
| Gate Charge(Qg) | 47nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0986 | $ 0.4930 |
| 50+ | $0.0796 | $ 3.9800 |
| 150+ | $0.0701 | $ 10.5150 |
| 500+ | $0.0630 | $ 31.5000 |
| 2500+ | $0.0573 | $ 143.2500 |
| 5000+ | $0.0544 | $ 272.0000 |
