| Manufacturer | |
| Mfr. Part # | DOD50N03 |
| EBEE Part # | E836499176 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 30V 55A 10mΩ@10V,30A 37.5W 2.5V@250uA 1 N-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0733 | $ 0.7330 |
| 100+ | $0.0598 | $ 5.9800 |
| 300+ | $0.0531 | $ 15.9300 |
| 2500+ | $0.0481 | $ 120.2500 |
| 5000+ | $0.0439 | $ 219.5000 |
| 10000+ | $0.0420 | $ 420.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | DOINGTER DOD50N03 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-Channel | |
| Drain Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (Id) | 55A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@10V,30A | |
| Power Dissipation (Pd) | 37.5W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF@15V | |
| Input Capacitance (Ciss@Vds) | 940pF@15V | |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0733 | $ 0.7330 |
| 100+ | $0.0598 | $ 5.9800 |
| 300+ | $0.0531 | $ 15.9300 |
| 2500+ | $0.0481 | $ 120.2500 |
| 5000+ | $0.0439 | $ 219.5000 |
| 10000+ | $0.0420 | $ 420.0000 |
