| Manufacturer | |
| Mfr. Part # | DOD40P10 |
| EBEE Part # | E842412124 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2230 | $ 1.1150 |
| 50+ | $0.1947 | $ 9.7350 |
| 150+ | $0.1826 | $ 27.3900 |
| 500+ | $0.1675 | $ 83.7500 |
| 2500+ | $0.1608 | $ 402.0000 |
| 5000+ | $0.1568 | $ 784.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD40P10 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 40mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 69pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 107W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 8.055nF | |
| Output Capacitance(Coss) | 194pF | |
| Gate Charge(Qg) | 146nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2230 | $ 1.1150 |
| 50+ | $0.1947 | $ 9.7350 |
| 150+ | $0.1826 | $ 27.3900 |
| 500+ | $0.1675 | $ 83.7500 |
| 2500+ | $0.1608 | $ 402.0000 |
| 5000+ | $0.1568 | $ 784.0000 |
