| Manufacturer | |
| Mfr. Part # | DOD40P03 |
| EBEE Part # | E836499177 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 30V 40A 14.5mΩ@10V,10A 39W 1.9V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0956 | $ 0.4780 |
| 50+ | $0.0763 | $ 3.8150 |
| 150+ | $0.0667 | $ 10.0050 |
| 500+ | $0.0595 | $ 29.7500 |
| 2500+ | $0.0519 | $ 129.7500 |
| 5000+ | $0.0490 | $ 245.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD40P03 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 11mΩ@10V;15mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 144pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 39W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.229nF | |
| Output Capacitance(Coss) | 159pF | |
| Gate Charge(Qg) | 26.3nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0956 | $ 0.4780 |
| 50+ | $0.0763 | $ 3.8150 |
| 150+ | $0.0667 | $ 10.0050 |
| 500+ | $0.0595 | $ 29.7500 |
| 2500+ | $0.0519 | $ 129.7500 |
| 5000+ | $0.0490 | $ 245.0000 |
