| Manufacturer | |
| Mfr. Part # | DOD30P06 |
| EBEE Part # | E841416029 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 30A 35mΩ@10V,15A 50W 2.5V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1768 | $ 0.8840 |
| 50+ | $0.1411 | $ 7.0550 |
| 150+ | $0.1258 | $ 18.8700 |
| 500+ | $0.1067 | $ 53.3500 |
| 2500+ | $0.0982 | $ 245.5000 |
| 5000+ | $0.0931 | $ 465.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD30P06 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 35mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 2.535nF | |
| Output Capacitance(Coss) | 130pF | |
| Gate Charge(Qg) | 46nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1768 | $ 0.8840 |
| 50+ | $0.1411 | $ 7.0550 |
| 150+ | $0.1258 | $ 18.8700 |
| 500+ | $0.1067 | $ 53.3500 |
| 2500+ | $0.0982 | $ 245.5000 |
| 5000+ | $0.0931 | $ 465.5000 |
