| Manufacturer | |
| Mfr. Part # | DOD30N10 |
| EBEE Part # | E842374604 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1363 | $ 0.6815 |
| 50+ | $0.1078 | $ 5.3900 |
| 150+ | $0.0935 | $ 14.0250 |
| 500+ | $0.0828 | $ 41.4000 |
| 2500+ | $0.0742 | $ 185.5000 |
| 5000+ | $0.0700 | $ 350.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD30N10 | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 30mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 99pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 88W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 2.857nF | |
| Gate Charge(Qg) | 65nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1363 | $ 0.6815 |
| 50+ | $0.1078 | $ 5.3900 |
| 150+ | $0.0935 | $ 14.0250 |
| 500+ | $0.0828 | $ 41.4000 |
| 2500+ | $0.0742 | $ 185.5000 |
| 5000+ | $0.0700 | $ 350.0000 |
