| Manufacturer | |
| Mfr. Part # | DOD30N06 |
| EBEE Part # | E836499179 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 30A 30mΩ@10V,15A 55W 2.5V@250uA 1 N-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0758 | $ 0.3790 |
| 50+ | $0.0627 | $ 3.1350 |
| 150+ | $0.0561 | $ 8.4150 |
| 500+ | $0.0512 | $ 25.6000 |
| 2500+ | $0.0473 | $ 118.2500 |
| 5000+ | $0.0453 | $ 226.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | DOINGTER DOD30N06 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-Channel | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 30A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 30mΩ@10V,15A | |
| Power Dissipation (Pd) | 55W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF@25V | |
| Input Capacitance (Ciss@Vds) | 1.05nF@25V | |
| Total Gate Charge (Qg@Vgs) | 25nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0758 | $ 0.3790 |
| 50+ | $0.0627 | $ 3.1350 |
| 150+ | $0.0561 | $ 8.4150 |
| 500+ | $0.0512 | $ 25.6000 |
| 2500+ | $0.0473 | $ 118.2500 |
| 5000+ | $0.0453 | $ 226.5000 |
