| Manufacturer | |
| Mfr. Part # | DOD30N02 |
| EBEE Part # | E841416024 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 20V 30A 10mΩ@4.5V,15A 20W 1.2V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0677 | $ 0.6770 |
| 100+ | $0.0535 | $ 5.3500 |
| 300+ | $0.0465 | $ 13.9500 |
| 2500+ | $0.0411 | $ 102.7500 |
| 5000+ | $0.0369 | $ 184.5000 |
| 10000+ | $0.0348 | $ 348.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD30N02 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 10mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 20W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.5nF | |
| Gate Charge(Qg) | [email protected] |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0677 | $ 0.6770 |
| 100+ | $0.0535 | $ 5.3500 |
| 300+ | $0.0465 | $ 13.9500 |
| 2500+ | $0.0411 | $ 102.7500 |
| 5000+ | $0.0369 | $ 184.5000 |
| 10000+ | $0.0348 | $ 348.0000 |
