| Manufacturer | |
| Mfr. Part # | DOD25N10 |
| EBEE Part # | E841416023 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 25A 25mΩ@10V,10A 27W 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1350 | $ 0.6750 |
| 50+ | $0.1072 | $ 5.3600 |
| 150+ | $0.0933 | $ 13.9950 |
| 500+ | $0.0828 | $ 41.4000 |
| 2500+ | $0.0745 | $ 186.2500 |
| 5000+ | $0.0703 | $ 351.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD25N10 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 25mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 27W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 680pF | |
| Output Capacitance(Coss) | 371pF | |
| Gate Charge(Qg) | 11nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1350 | $ 0.6750 |
| 50+ | $0.1072 | $ 5.3600 |
| 150+ | $0.0933 | $ 13.9950 |
| 500+ | $0.0828 | $ 41.4000 |
| 2500+ | $0.0745 | $ 186.2500 |
| 5000+ | $0.0703 | $ 351.5000 |
