| Manufacturer | |
| Mfr. Part # | DOD23P04 |
| EBEE Part # | E841416022 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 40V 23A 40mΩ@10V,10A 34.7W 2.5V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0880 | $ 0.4400 |
| 50+ | $0.0715 | $ 3.5750 |
| 150+ | $0.0633 | $ 9.4950 |
| 500+ | $0.0571 | $ 28.5500 |
| 2500+ | $0.0505 | $ 126.2500 |
| 5000+ | $0.0480 | $ 240.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD23P04 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 40mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 79.4pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 34.7W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 23A | |
| Ciss-Input Capacitance | 1.033nF | |
| Gate Charge(Qg) | 19nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0880 | $ 0.4400 |
| 50+ | $0.0715 | $ 3.5750 |
| 150+ | $0.0633 | $ 9.4950 |
| 500+ | $0.0571 | $ 28.5500 |
| 2500+ | $0.0505 | $ 126.2500 |
| 5000+ | $0.0480 | $ 240.0000 |
