| Manufacturer | |
| Mfr. Part # | DOD20P10 |
| EBEE Part # | E842412123 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1882 | $ 0.9410 |
| 50+ | $0.1506 | $ 7.5300 |
| 150+ | $0.1345 | $ 20.1750 |
| 500+ | $0.1143 | $ 57.1500 |
| 2500+ | $0.1054 | $ 263.5000 |
| 5000+ | $0.1000 | $ 500.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD20P10 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 80mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 66W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 4.077nF | |
| Output Capacitance(Coss) | 119pF | |
| Gate Charge(Qg) | 52nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1882 | $ 0.9410 |
| 50+ | $0.1506 | $ 7.5300 |
| 150+ | $0.1345 | $ 20.1750 |
| 500+ | $0.1143 | $ 57.1500 |
| 2500+ | $0.1054 | $ 263.5000 |
| 5000+ | $0.1000 | $ 500.0000 |
