| Manufacturer | |
| Mfr. Part # | DOD20P10-A |
| EBEE Part # | E842412122 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1897 | $ 0.9485 |
| 50+ | $0.1657 | $ 8.2850 |
| 150+ | $0.1554 | $ 23.3100 |
| 500+ | $0.1425 | $ 71.2500 |
| 2500+ | $0.1368 | $ 342.0000 |
| 5000+ | $0.1334 | $ 667.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD20P10-A | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 78mΩ@10V;86mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 54W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 3.02nF | |
| Output Capacitance(Coss) | 120pF | |
| Gate Charge(Qg) | 44nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1897 | $ 0.9485 |
| 50+ | $0.1657 | $ 8.2850 |
| 150+ | $0.1554 | $ 23.3100 |
| 500+ | $0.1425 | $ 71.2500 |
| 2500+ | $0.1368 | $ 342.0000 |
| 5000+ | $0.1334 | $ 667.0000 |
