| Manufacturer | |
| Mfr. Part # | DOD20N06 |
| EBEE Part # | E836499181 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 20A 36mΩ@10V,10A 31W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0742 | $ 0.7420 |
| 100+ | $0.0603 | $ 6.0300 |
| 300+ | $0.0534 | $ 16.0200 |
| 2500+ | $0.0482 | $ 120.5000 |
| 5000+ | $0.0440 | $ 220.0000 |
| 10000+ | $0.0420 | $ 420.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | DOINGTER DOD20N06 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-Channel | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 20A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 36mΩ@10V,10A | |
| Power Dissipation (Pd) | 31W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 45.3pF@25V | |
| Input Capacitance (Ciss@Vds) | 1.15nF@25V | |
| Total Gate Charge (Qg@Vgs) | 20.3nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0742 | $ 0.7420 |
| 100+ | $0.0603 | $ 6.0300 |
| 300+ | $0.0534 | $ 16.0200 |
| 2500+ | $0.0482 | $ 120.5000 |
| 5000+ | $0.0440 | $ 220.0000 |
| 10000+ | $0.0420 | $ 420.0000 |
