| Manufacturer | |
| Mfr. Part # | DOD18N20 |
| EBEE Part # | E842395891 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2450 | $ 1.2250 |
| 50+ | $0.1924 | $ 9.6200 |
| 150+ | $0.1698 | $ 25.4700 |
| 500+ | $0.1417 | $ 70.8500 |
| 2500+ | $0.1292 | $ 323.0000 |
| 5000+ | $0.1217 | $ 608.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD18N20 | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 140mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 85W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 1.173nF | |
| Gate Charge(Qg) | 7.3nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2450 | $ 1.2250 |
| 50+ | $0.1924 | $ 9.6200 |
| 150+ | $0.1698 | $ 25.4700 |
| 500+ | $0.1417 | $ 70.8500 |
| 2500+ | $0.1292 | $ 323.0000 |
| 5000+ | $0.1217 | $ 608.5000 |
