| Manufacturer | |
| Mfr. Part # | DOD15N10 |
| EBEE Part # | E836499175 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 15A 100mΩ@10V,10A 46W 2.4V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0782 | $ 0.3910 |
| 50+ | $0.0617 | $ 3.0850 |
| 150+ | $0.0534 | $ 8.0100 |
| 500+ | $0.0472 | $ 23.6000 |
| 2500+ | $0.0412 | $ 103.0000 |
| 5000+ | $0.0387 | $ 193.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD15N10 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 75mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 46W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 1.083nF | |
| Output Capacitance(Coss) | 51pF | |
| Gate Charge(Qg) | 6nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0782 | $ 0.3910 |
| 50+ | $0.0617 | $ 3.0850 |
| 150+ | $0.0534 | $ 8.0100 |
| 500+ | $0.0472 | $ 23.6000 |
| 2500+ | $0.0412 | $ 103.0000 |
| 5000+ | $0.0387 | $ 193.5000 |
