| Manufacturer | |
| Mfr. Part # | DOD150N03 |
| EBEE Part # | E841430584 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 30V 150A 108W 6.5mΩ@4.5V,20A 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1338 | $ 0.6690 |
| 50+ | $0.1058 | $ 5.2900 |
| 150+ | $0.0918 | $ 13.7700 |
| 500+ | $0.0813 | $ 40.6500 |
| 2500+ | $0.0729 | $ 182.2500 |
| 5000+ | $0.0687 | $ 343.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD150N03 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 3.3mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 108W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 150A | |
| Ciss-Input Capacitance | 3.499nF | |
| Gate Charge(Qg) | 37nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1338 | $ 0.6690 |
| 50+ | $0.1058 | $ 5.2900 |
| 150+ | $0.0918 | $ 13.7700 |
| 500+ | $0.0813 | $ 40.6500 |
| 2500+ | $0.0729 | $ 182.2500 |
| 5000+ | $0.0687 | $ 343.5000 |
