| Manufacturer | |
| Mfr. Part # | DOD12P10 |
| EBEE Part # | E841416020 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 12A 54W 200mΩ@10V,5A 3V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1390 | $ 0.6950 |
| 50+ | $0.1108 | $ 5.5400 |
| 150+ | $0.0966 | $ 14.4900 |
| 500+ | $0.0860 | $ 43.0000 |
| 2500+ | $0.0775 | $ 193.7500 |
| 5000+ | $0.0733 | $ 366.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD12P10 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 200mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 54W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 2.5nF | |
| Output Capacitance(Coss) | 170pF | |
| Gate Charge(Qg) | 40nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1390 | $ 0.6950 |
| 50+ | $0.1108 | $ 5.5400 |
| 150+ | $0.0966 | $ 14.4900 |
| 500+ | $0.0860 | $ 43.0000 |
| 2500+ | $0.0775 | $ 193.7500 |
| 5000+ | $0.0733 | $ 366.5000 |
