| Manufacturer | |
| Mfr. Part # | DOD12N10 |
| EBEE Part # | E836499182 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 11.3A 120mΩ@10V,8A 29.9W 2.4V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0792 | $ 0.3960 |
| 50+ | $0.0635 | $ 3.1750 |
| 150+ | $0.0556 | $ 8.3400 |
| 500+ | $0.0497 | $ 24.8500 |
| 2500+ | $0.0441 | $ 110.2500 |
| 5000+ | $0.0417 | $ 208.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD12N10 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 120mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 29.9W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Current - Continuous Drain(Id) | 11.3A | |
| Ciss-Input Capacitance | 500pF | |
| Output Capacitance(Coss) | 48pF | |
| Gate Charge(Qg) | 16.8nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0792 | $ 0.3960 |
| 50+ | $0.0635 | $ 3.1750 |
| 150+ | $0.0556 | $ 8.3400 |
| 500+ | $0.0497 | $ 24.8500 |
| 2500+ | $0.0441 | $ 110.2500 |
| 5000+ | $0.0417 | $ 208.5000 |
