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DOINGTER DOD12N10


Manufacturer
Mfr. Part #
DOD12N10
EBEE Part #
E836499182
Package
TO-252
Customer #
Datasheet
EDA Models
ECCN
-
Description
100V 11.3A 120mΩ@10V,8A 29.9W 2.4V@250uA 1 N-channel TO-252 MOSFETs ROHS
This materials supports customized cables!
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7980 In Stock for Fast Shipping
7980 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
5+$0.0792$ 0.3960
50+$0.0635$ 3.1750
150+$0.0556$ 8.3400
500+$0.0497$ 24.8500
2500+$0.0441$ 110.2500
5000+$0.0417$ 208.5000
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TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetDOINGTER DOD12N10
RoHS
TypeN-Channel
RDS(on)120mΩ@10V
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)27pF
Number1 N-channel
Pd - Power Dissipation29.9W
Drain to Source Voltage100V
Gate Threshold Voltage (Vgs(th))2.4V
Current - Continuous Drain(Id)11.3A
Ciss-Input Capacitance500pF
Output Capacitance(Coss)48pF
Gate Charge(Qg)16.8nC@10V

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