| Manufacturer | |
| Mfr. Part # | DOD120N03 |
| EBEE Part # | E836499180 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 30V 120A 4mΩ@10V,120A 100W 1V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1137 | $ 0.5685 |
| 50+ | $0.0912 | $ 4.5600 |
| 150+ | $0.0799 | $ 11.9850 |
| 500+ | $0.0715 | $ 35.7500 |
| 2500+ | $0.0647 | $ 161.7500 |
| 5000+ | $0.0613 | $ 306.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD120N03 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 3mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 315pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 120A | |
| Ciss-Input Capacitance | 4nF | |
| Gate Charge(Qg) | 31.6nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1137 | $ 0.5685 |
| 50+ | $0.0912 | $ 4.5600 |
| 150+ | $0.0799 | $ 11.9850 |
| 500+ | $0.0715 | $ 35.7500 |
| 2500+ | $0.0647 | $ 161.7500 |
| 5000+ | $0.0613 | $ 306.5000 |
