| Manufacturer | |
| Mfr. Part # | DOD100N03 |
| EBEE Part # | E836499184 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 30V 100A 88W 4mΩ@10V,24A 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1013 | $ 0.5065 |
| 50+ | $0.0804 | $ 4.0200 |
| 150+ | $0.0699 | $ 10.4850 |
| 500+ | $0.0621 | $ 31.0500 |
| 2500+ | $0.0545 | $ 136.2500 |
| 5000+ | $0.0513 | $ 256.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOD100N03 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 4mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 88W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3.3nF | |
| Gate Charge(Qg) | [email protected] |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1013 | $ 0.5065 |
| 50+ | $0.0804 | $ 4.0200 |
| 150+ | $0.0699 | $ 10.4850 |
| 500+ | $0.0621 | $ 31.0500 |
| 2500+ | $0.0545 | $ 136.2500 |
| 5000+ | $0.0513 | $ 256.5000 |
