| Manufacturer | |
| Mfr. Part # | DOB14N10 |
| EBEE Part # | E841430582 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 140A 312W 4mΩ@10V,20A 4V@250uA 1 N-channel TO-263 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5512 | $ 0.5512 |
| 10+ | $0.4436 | $ 4.4360 |
| 30+ | $0.3905 | $ 11.7150 |
| 100+ | $0.3375 | $ 33.7500 |
| 500+ | $0.3054 | $ 152.7000 |
| 800+ | $0.2893 | $ 231.4400 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | DOINGTER DOB14N10 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 4mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 312W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 140A | |
| Ciss-Input Capacitance | 4.7nF | |
| Gate Charge(Qg) | 80nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5512 | $ 0.5512 |
| 10+ | $0.4436 | $ 4.4360 |
| 30+ | $0.3905 | $ 11.7150 |
| 100+ | $0.3375 | $ 33.7500 |
| 500+ | $0.3054 | $ 152.7000 |
| 800+ | $0.2893 | $ 231.4400 |
