| Manufacturer | |
| Mfr. Part # | DO2302E-Q |
| EBEE Part # | E841384540 |
| Package | SOT-23 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 20V 2.8A 55mΩ@4.5V,2.8A 770mW 1V@250μA 1 N-Channel SOT-23 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.0071 | $ 0.7100 |
| 1000+ | $0.0058 | $ 5.8000 |
| 3000+ | $0.0049 | $ 14.7000 |
| 9000+ | $0.0045 | $ 40.5000 |
| 51000+ | $0.0041 | $ 209.1000 |
| 99000+ | $0.0039 | $ 386.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | DOINGTER DO2302E-Q | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-Channel | |
| Drain Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (Id) | 2.8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 55mΩ@4.5V,2.8A | |
| Power Dissipation (Pd) | 770mW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250μA | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF@10V | |
| Input Capacitance (Ciss@Vds) | 180pF@10V | |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.0071 | $ 0.7100 |
| 1000+ | $0.0058 | $ 5.8000 |
| 3000+ | $0.0049 | $ 14.7000 |
| 9000+ | $0.0045 | $ 40.5000 |
| 51000+ | $0.0041 | $ 209.1000 |
| 99000+ | $0.0039 | $ 386.1000 |
