| Manufacturer | |
| Mfr. Part # | DO2301E-Q |
| EBEE Part # | E841384537 |
| Package | SOT-23 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 20V 2A 125mΩ@4.5V,2A 800mW 1V@250μA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.0076 | $ 0.7600 |
| 1000+ | $0.0061 | $ 6.1000 |
| 3000+ | $0.0053 | $ 15.9000 |
| 9000+ | $0.0047 | $ 42.3000 |
| 51000+ | $0.0044 | $ 224.4000 |
| 99000+ | $0.0041 | $ 405.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | DOINGTER DO2301E-Q | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 Piece P-Channel | |
| Drain Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (Id) | 2A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 125mΩ@4.5V,2A | |
| Power Dissipation (Pd) | 800mW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250μA | |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF@10V | |
| Input Capacitance (Ciss@Vds) | 150pF@10V | |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.0076 | $ 0.7600 |
| 1000+ | $0.0061 | $ 6.1000 |
| 3000+ | $0.0053 | $ 15.9000 |
| 9000+ | $0.0047 | $ 42.3000 |
| 51000+ | $0.0044 | $ 224.4000 |
| 99000+ | $0.0041 | $ 405.9000 |
