| Manufacturer | |
| Mfr. Part # | ASDM540G-R |
| EBEE Part # | E82972860 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 33A 31mΩ@10V,12A 70W 1.6V@250uA 1 N-channel TO-263-3 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3037 | $ 1.5185 |
| 50+ | $0.2394 | $ 11.9700 |
| 150+ | $0.2119 | $ 31.7850 |
| 800+ | $0.1731 | $ 138.4800 |
| 2400+ | $0.1578 | $ 378.7200 |
| 4800+ | $0.1486 | $ 713.2800 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ASDsemi ASDM540G-R | |
| RoHS | ||
| RDS(on) | 35mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 70W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 2.3nF | |
| Output Capacitance(Coss) | 215pF | |
| Gate Charge(Qg) | 55nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3037 | $ 1.5185 |
| 50+ | $0.2394 | $ 11.9700 |
| 150+ | $0.2119 | $ 31.7850 |
| 800+ | $0.1731 | $ 138.4800 |
| 2400+ | $0.1578 | $ 378.7200 |
| 4800+ | $0.1486 | $ 713.2800 |
