| Manufacturer | |
| Mfr. Part # | ASDM100R066NQ-R |
| EBEE Part # | E82972872 |
| Package | PDFN-8(5x6) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 68A 5.9mΩ@10V,13.5A 108W 2.3V@250uA 1 N-channel PDFN-8(5x6) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9316 | $ 0.9316 |
| 200+ | $0.3620 | $ 72.4000 |
| 500+ | $0.3496 | $ 174.8000 |
| 1000+ | $0.3425 | $ 342.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ASDsemi ASDM100R066NQ-R | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 68A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.9mΩ@10V,13.5A | |
| Power Dissipation (Pd) | 108W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF@50V | |
| Input Capacitance (Ciss@Vds) | 3.32nF@50V | |
| Total Gate Charge (Qg@Vgs) | 60nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9316 | $ 0.9316 |
| 200+ | $0.3620 | $ 72.4000 |
| 500+ | $0.3496 | $ 174.8000 |
| 1000+ | $0.3425 | $ 342.5000 |
