| Manufacturer | |
| Mfr. Part # | ASD65R350E |
| EBEE Part # | E85440010 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 700V 11A 350mΩ 83W 3.5V 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6166 | $ 0.6166 |
| 10+ | $0.5177 | $ 5.1770 |
| 30+ | $0.4698 | $ 14.0940 |
| 100+ | $0.4312 | $ 43.1200 |
| 500+ | $0.3972 | $ 198.6000 |
| 1000+ | $0.3786 | $ 378.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | ANHI ASD65R350E | |
| RoHS | ||
| RDS(on) | 350mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 83W | |
| Drain to Source Voltage | 700V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 901pF | |
| Gate Charge(Qg) | - |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6166 | $ 0.6166 |
| 10+ | $0.5177 | $ 5.1770 |
| 30+ | $0.4698 | $ 14.0940 |
| 100+ | $0.4312 | $ 43.1200 |
| 500+ | $0.3972 | $ 198.6000 |
| 1000+ | $0.3786 | $ 378.6000 |
