| Manufacturer | |
| Mfr. Part # | AGM628MAP |
| EBEE Part # | E822364308 |
| Package | PDFN-8(3.3x3.3) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | 60V 25A 35W 1 N-Channel + 1 P-Channel PDFN-8(3.3x3.3) MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2284 | $ 1.1420 |
| 50+ | $0.1838 | $ 9.1900 |
| 150+ | $0.1647 | $ 24.7050 |
| 500+ | $0.1409 | $ 70.4500 |
| 2500+ | $0.1302 | $ 325.5000 |
| 5000+ | $0.1239 | $ 619.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | AGM-Semi AGM628MAP | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-Channel + 1 P-Channel | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 25A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 30mΩ@10V,15A;44mΩ@10V,15A | |
| Power Dissipation (Pd) | 35W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA;1.7V@250uA | |
| Input Capacitance (Ciss@Vds) | 0.868nF@30V;0.748nF@30V | |
| Total Gate Charge (Qg@Vgs) | 19nC@10V;25nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2284 | $ 1.1420 |
| 50+ | $0.1838 | $ 9.1900 |
| 150+ | $0.1647 | $ 24.7050 |
| 500+ | $0.1409 | $ 70.4500 |
| 2500+ | $0.1302 | $ 325.5000 |
| 5000+ | $0.1239 | $ 619.5000 |
