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AGM-Semi AGM18N10AP


Manufacturer
Mfr. Part #
AGM18N10AP
EBEE Part #
E87509649
Package
PDFN-8(3.3x3.3)
Customer #
Datasheet
EDA Models
ECCN
-
Description
100V 35A 45W 17mΩ@10V,12A 1.6V@250uA 1 N-channel PDFN-8(3.3x3.3) MOSFETs ROHS
This materials supports customized cables!
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4250 In Stock for Fast Shipping
4250 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
5+$0.1458$ 0.7290
50+$0.1159$ 5.7950
150+$0.1030$ 15.4500
500+$0.0871$ 43.5500
2500+$0.0799$ 199.7500
5000+$0.0757$ 378.5000
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TypeDescription
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CategoryTransistors/Thyristors ,MOSFETs
DatasheetAGM-Semi AGM18N10AP
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Type1 N-channel
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)35A
Drain Source On Resistance (RDS(on)@Vgs,Id)17mΩ@10V,12A
Power Dissipation (Pd)45W
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)5.3pF@50V
Total Gate Charge (Qg@Vgs)12.5nC@10V

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