Recommonended For You
Images are for reference only
Add to Favourites
Agertech ATM2N65TD
| Manufacturer | |
| Mfr. Part # | ATM2N65TD |
| EBEE Part # | E82875843 |
| Package | TO-251 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 2A 3.9Ω@10V,1A 28W 4V@250uA 1 N-channel TO-251 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1535 | $ 0.7675 |
| 50+ | $0.1232 | $ 6.1600 |
| 160+ | $0.1102 | $ 17.6320 |
| 480+ | $0.0882 | $ 42.3360 |
| 2480+ | $0.0810 | $ 200.8800 |
| 4000+ | $0.0766 | $ 306.4000 |
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | Agertech ATM2N65TD | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 2A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.9Ω@10V,1A | |
| Power Dissipation (Pd) | 28W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF@25V | |
| Input Capacitance (Ciss@Vds) | 370pF@25V | |
| Total Gate Charge (Qg@Vgs) | 45nC@10V |
Shopping Guide
Expand
In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1535 | $ 0.7675 |
| 50+ | $0.1232 | $ 6.1600 |
| 160+ | $0.1102 | $ 17.6320 |
| 480+ | $0.0882 | $ 42.3360 |
| 2480+ | $0.0810 | $ 200.8800 |
| 4000+ | $0.0766 | $ 306.4000 |
